代表性论文：

1. Yi, H.; Zhao, J.; Huang, Y.; Zhu, G.; Mei, Y.; Li, Z.; Li, L.*, Formation of Graphene–Silicon Junction by Room Temperature Reduction with Simultaneous Defects Removal. IEEE Trans. Electron Devices. 2021,68 (2), 873-878.

2.  Li, L.; Tuan, C.-C.; Zhang, C.; Chen, Y.; Lian, G.; Wong, C. P. Uniform Metal-Assisted Chemical Etching for Ultra-High-Aspect-Ratio Microstructures on Silicon. IEEE J. Microelectromech. Syst. 2019, 28, 143.

3. Li, L.; Zhang, C.; Tuan, C.-C.; Chen, Y.; Wong, C. P. High-Aspect-Ratio Microstructures with Versatile Slanting Angles on Silicon by Uniform Metal-assisted Chemical Etching. J. Micromech. Microeng. 2018, 28, 055006.

4. Li, L.; Li, B.; Zhang, C.; Tuan, C.-C.; Lin, Z.; Wong, C.-P. A facile and low-cost route to high-aspect-ratio microstructures on silicon via a judicious combination of flow-enabled self-assembly and metal-assisted chemical etching. J. Mater. Chem. C 2016,4, pp 8953.

5. Li, L.; Song, B.; Maurer, L.; Lin, Z.; Lian, G.; Tuan, C.-C.; Moon, K.-S.; Wong, C.-P. Molecular engineering of aromatic amine spacers for high-performance graphene-based supercapacitors. Nano Energy 2016, 21, pp 276.

6. Li, L..; Zhang, G.; Wong, C. P. Formation of Through Silicon Vias in Wafer Level by Metal-assisted Chemical Etching for Silicon Interposer. IEEE Transactions on Components, Packaging and Manufacturing Technology 2015, 5, pp 1039.

7. Li, L.; Zhao, X.; Wong, C. P. Charge Transport in Uniform Metal-assisted Chemical Etching (UMaCE) for 3D High-Aspect Ratio Micro- and Nanofabrication on Silicon. ECS. J. Solid State Sci. Technol. 2015, 4, pp 337.

8. Li, L.; Zhao, X.; Wong, C.-P. Deep Etching of Single- and Polycrystalline Silicon with High Speed, High Aspect Ratio, High Uniformity and 3D Complexity by Electric Bias-Attenuated Metal-Assisted Chemical Etching (EMaCE). ACS Appl. Mater. Interfaces 2014, 6, pp 16782.

9. Li, L.; Liu, Y.; Zhao, X.; Lin, Z.; Wong, C.-P. Uniform Vertical Trench Etching on Silicon with High Aspect Ratio by Metal-Assisted Chemical Etching Using Nanoporous Catalysts. ACS Appl. Mater. Interfaces 2014,6, pp 575.

授权专利：

1. Li, L.; Wong, C.P., et al. “METAL-ASSISTED CHEMICAL ETCHING OF A SEMICONDUCTIVE SUBSTRATE WITH HIGH ASPECT RATIO, HIGH GEOMETIC UNIFORMITY, AND CONTROLLED 3D PROFILESUS”, U.S. Patent 10,134,634

发展新工艺、新材料及相应表征技术，理解材料结构-性能关系和失效机理，搭建特色加工和检测设备，包括：

-图形化工艺与材料；

-互连工艺与材料：low-k介电层，导电材料，扩散阻挡层；

-三维封装工艺与材料：硅通孔，微凸点，铜-氧化硅混合键合；

-深硅刻蚀特色工艺：微纳深孔、深槽和斜孔、弯孔加工；

-MEMS、微流、光学器件加工；

-失效分析：薄膜与微纳结构的力学分析，界面分析，分子结构分析。

-先进封装工艺与材料；-应用于MEMS、超材料等领域的微纳加工技术；-先进表征技术。

代表性论文：

1.  Yi, H.; Zhao, J.; Huang, Y.; Zhu, G.; Mei, Y.; Li, Z.; Li, L.*, Formation of Graphene–Silicon Junction by Room Temperature Reduction with Simultaneous Defects Removal. IEEE Trans. Electron Devices. 2021,68 (2), 873-878.

2. Li, L.; Tuan, C.-C.; Zhang, C.; Chen, Y.; Lian, G.; Wong, C. P. Uniform Metal-Assisted Chemical Etching for Ultra-High-Aspect-Ratio Microstructures on Silicon. IEEE J. Microelectromech. Syst. 2019, 28, 143.

3. Li, L.; Zhang, C.; Tuan, C.-C.; Chen, Y.; Wong, C. P. High-Aspect-Ratio Microstructures with Versatile Slanting Angles on Silicon by Uniform Metal-assisted Chemical Etching. J. Micromech. Microeng. 2018, 28, 055006.

4. Li, L.; Li, B.; Zhang, C.; Tuan, C.-C.; Lin, Z.; Wong, C.-P. A facile and low-cost route to high-aspect-ratio microstructures on silicon via a judicious combination of flow-enabled self-assembly and metal-assisted chemical etching. J. Mater. Chem. C 2016,4, pp 8953.

5. Li, L.; Song, B.; Maurer, L.; Lin, Z.; Lian, G.; Tuan, C.-C.; Moon, K.-S.; Wong, C.-P. Molecular engineering of aromatic amine spacers for high-performance graphene-based supercapacitors. Nano Energy 2016, 21, pp 276.

6. Li, L..; Zhang, G.; Wong, C. P. Formation of Through Silicon Vias in Wafer Level by Metal-assisted Chemical Etching for Silicon Interposer. IEEE Transactions on Components, Packaging and Manufacturing Technology 2015, 5, pp 1039.

7. Li, L.; Zhao, X.; Wong, C. P. Charge Transport in Uniform Metal-assisted Chemical Etching (UMaCE) for 3D High-Aspect Ratio Micro- and Nanofabrication on Silicon. ECS. J. Solid State Sci. Technol. 2015, 4, pp 337.

8. Li, L.; Zhao, X.; Wong, C.-P. Deep Etching of Single- and Polycrystalline Silicon with High Speed, High Aspect Ratio, High Uniformity and 3D Complexity by Electric Bias-Attenuated Metal-Assisted Chemical Etching (EMaCE). ACS Appl. Mater. Interfaces 2014, 6, pp 16782.

9. Li, L.; Liu, Y.; Zhao, X.; Lin, Z.; Wong, C.-P. Uniform Vertical Trench Etching on Silicon with High Aspect Ratio by Metal-Assisted Chemical Etching Using Nanoporous Catalysts. ACS Appl. Mater. Interfaces 2014,6, pp 575.

授权专利：

1. Li, L.; Wong, C.P., et al. “METAL-ASSISTED CHEMICAL ETCHING OF A SEMICONDUCTIVE SUBSTRATE WITH HIGH ASPECT RATIO, HIGH GEOMETIC UNIFORMITY, AND CONTROLLED 3D PROFILESUS”, U.S. Patent 10,134,634

课题组常年招收有志于芯片制造工艺、材料研究的博士后、博士生、硕士生和访问学者。